Solid-state image pickup apparatus, its driving method, and camera system

ABSTRACT

There is used an XY address type solid-state image pickup element (for example, a MOS type image sensor) in which two rows and two columns are made a unit, and color filters having a color coding of repetition of the unit (repetition of two verticals (two horizontals) are arranged, and when a thinning-out read mode is specified, a clock frequency of a system is changed to 1/9, and on the basis of the changed clock frequency, a pixel is selected every three pixels in both a row direction and a column direction to successively read out a pixel signal.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of U.S. Ser. No. 14/590,693, now U.S.Pat. No. 9,584,740, which is a Continuation of U.S. Ser. No. 13/450,236,filed Apr. 18, 2012, now U.S. Pat. No. 8,934,038, issued Jan. 13, 2015,which is a Continuation of U.S. Ser. No. 12/363,249, filed Jan. 30,2009, now U.S. Pat. No. 8,194,163, issued Jun. 5, 2012, which is acontinuation of U.S. Ser. No. 11/341,104, filed Jan. 27, 2006, now U.S.Pat. No. 7,545,411, issued Jun. 9, 2009, which is a Continuation of U.S.Ser. No. 09/834,431, filed Apr. 13, 2001, now U.S. Pat. No. 6,992,706,which claims priority to Japanese Application No. 2000-111494 filed Apr.13, 2000, the entire disclosures of which are hereby incorporated hereinby reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a solid-state image pickup apparatus,its driving method, and a camera system, and particularly to asolid-state image pickup apparatus using an XY address type solid-stateimage pickup element typified by a MOS type image sensor, its drivingmethod, and a camera system using an XY address type solid-state imagepickup element as an image pickup device, such as a digital stillcamera.

2. Description of the Related Art

In an image pickup technique of a still picture typified by a digitalstill camera, a solid-state image pickup element including a largenumber of pixels is used as an image pickup device, and pixelinformation of all pixels is independently read out so that a stillpicture is obtained. For example, in the digital still camera, since astill picture taken by releasing the shutter is required to have highfineness, a solid-state image pickup element including more pixels isused.

On the other hand, before a still picture is taken, in general, anoperation of confirming (monitoring) an object is carried out byprojecting a motion picture (image of the object) on, for example, aliquid crystal monitor of a small screen. At the stage (monitoring mode)in which the object is confirmed, a rough image (image of lowresolution) corresponding to the number of pixels of the liquid crystalmonitor is satisfactory.

Besides, in the image transmission for a potable equipment such as adigital still camera, a data rate of transmission is limited.Accordingly, with respect to a still picture, pixel information of allpixels is transmitted to obtain an image of high fineness, and withrespect to a motion picture, pixel information is thinned out todecrease the amount of information and is transmitted.

Hitherto, as an image pickup device for a single chip imager colorcamera, it has been general to use a charge transfer type solid-stateimage pickup element, for example, a CCD (Charge Coupled Device) typeimage sensor. On the other hand, in recent years, an XY address typesolid-state image pickup element, which is more advantageous than theCCD type image sensor in view of reduction in consumed electric powerand miniaturization of a system, for example, a MOS type image sensor,has come into use.

Incidentally, in the single chip imager color camera, in thethinning-out processing of pixel information in the case where the CCDtype image sensor is used as the image pickup device, for example, amethod has been adopted in which after pixel information for all pixelsis read out from the image sensor, the pixel information is thinned outby an external signal processing system. Also in the color camera using,for example, the MOS type image sensor as the image pickup device, thethinning-out read method in the CCD type image sensor has been adopted.

The reason why the thinning-out read method has been adopted like this,in which the pixel information is thinned out by the external signalprocessing system after the pixel information for all pixels is read outfrom the image sensor, is as follows:

The reason is as follows: (1) it has been impossible to thin out thepixel information while the spatial arrangement of colors of colorfilters and the output sequence are held, (2) pixels are sequentiallyselected by a normal shift register used as selection means forselecting the pixels, (3) the CCD type image sensor has been able toread out signal charges from the pixels only in sequence, and so on.

As an example, when a case where pixel information is thinned out everyother pixel is considered, if there is no color difference, the amountof information can be compressed by half in each of lengthwise(vertical) and lateral (horizontal) directions. However, as shown inFIG. 9, in the case where there is a color difference between respectivepixels, if pixel information is thinned out every other pixel, pixelinformation is read out from only pixels of oblique line portions, andonly pixel information of, for example, B (blue) can be read out, sothat a color image can not be obtained.

From the reason like this, in the single chip imager color camera usingthe CCD type image sensor or the MOS type image sensor as the imagepickup device, after the image information for all pixels is read outfrom the image sensor, the thinning-out processing of the pixelinformation has been carried out by the external signal processingsystem. However, in this case, in spite of the fact that the amount ofinformation is reduced by the thinning-out processing, since a drivingfrequency of the image sensor is constant, consumed electric power cannot be reduced, on the contrary, a load is resultantly applied to asubsequent stage signal processing system.

Especially, in the single chip imager color camera using the MOS typeimage sensor as the image pickup device, since its superiority over theCCD type image sensor is in the reduction in consumed electric power andthe miniaturization of the system as described before, in the case wherethe amount of pixel information is reduced, if the consumed electricpower is reduced without applying a load to the subsequent stage signalprocessing system in proportion to that, it can be said that thesignificance is very high.

SUMMARY OF THE INVENTION

The present invention has been made in view of the above problem, and anobject thereof is to provide a solid-state image pickup apparatus whichenables reduction in consumed electric power without applying a load toa subsequent stage signal processing system in a case where athinning-out processing of pixel information is carried out, its drivingmethod, and a camera system.

In order to achieve the above object, according to the presentinvention, an XY address type solid-state image pickup element is usedin which color filters having a predetermined color coding are formedfor respective pixels arranged in a matrix, and when thinning-out readis specified for the solid-state image pickup element, a clock frequencyof a system is changed, and the pixels are selected on the basis of thechanged clock frequency and in a sequence corresponding to the colorcoding to read out pixel signals.

In the XY address type solid-state image pickup element, a pixel at anarbitrary address position can be selected, and its pixel signal can beread out in a unit of a pixel. Then, when the thinning-out read isspecified, first, the clock frequency of the system is changed. On thebasis of the frequency-changed clock frequency, the pixels are selectedin the sequence corresponding to the color coding of the color filtersand the pixel signals are read out, so that a thinning-out processing iscarried out at the stage where pixel information is read out from thepixels.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram showing an example of a structure of a camerasystem to which the present invention is applied.

FIG. 2 is a schematic structural view showing an example of a MOS typeimage sensor.

FIG. 3 is a timing chart for explaining the operation of all-pixel read.

FIG. 4 is a conceptual view for explaining the operation of thinning-outread of a first example.

FIG. 5 is a timing chart for explaining the operation of thinning-outread of the first example.

FIG. 6 is a conceptual view for explaining the operation of thinning-outread of a second example.

FIG. 7 is a conceptual view for explaining the operation of thinning-outread of a third example.

FIG. 8 is a conceptual view for explaining the operation of thinning-outread of a fourth example.

FIG. 9 is a view showing a primary color coding of repetition of twoverticals (two horizontals.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter, embodiments of the present invention will be described indetail with reference to the drawings. FIG. 1 is a block diagram showingan example of a structure of a camera system to which the presentinvention is applied.

In FIG. 1, in this system, an XY address type solid-state image pickupelement 11, for example, a MOS type image sensor is used as an imagepickup device. Incident light (image light) from an object forms animage on an image pickup plane of the solid-state image pickup element11 through an optical system (not shown) including an imaging lens andthe like. Besides, a clock which becomes the reference for a systemoperation is inputted to the system.

This clock, together with a mode selection signal for selecting anoperation mode (all-pixel read mode/thinning-out read mode) of thesystem, is inputted to a frequency dividing circuit 12. The modeselection signal is outputted from an operation mode setting portion 13.The frequency dividing circuit 12 changes the frequency of the inputtedclock in accordance with the mode selection signal, and supplies it to atiming generator 14 and a signal processing system of the solid-stateimage pickup element 11 described later.

On the basis of the clock having the frequency corresponding to theoperation mode and inputted from the frequency dividing circuit 12, thetiming generator 14 generates various driving pulses necessary fordriving the XY address type solid-state image pickup element 11, andsupplies the driving pulses to the solid-state image pickup element 11.An AGC (Automatic Gain Control) circuit 15, an A/D (Analog-Digital)converter 16, and a camera signal processing circuit 17 are provided atthe subsequent stage of the solid-state image pickup element 11. Theclock of the frequency corresponding to the operation mode is suppliedfrom the frequency dividing circuit 12 to these circuits 15, 16 and 17.

The AGC circuit 15 performs an AGC processing for making the signallevel of the output signal of the solid-state image pickup element 11constant. The A/D converter 16 A/D converts the output signal of the AGCcircuit 15 and supplies it to the camera signal processing circuit 17.The camera signal processing circuit 17 has a digital signal processing(DSP) structure. A camera signal processing for generating a brightnesssignal and a color difference signal from inputted image pickup data(image data), and a signal processing such as a detection processing,for example, automatic exposure, automatic focusing, or automatic whitebalance, are carried out in this camera signal processing circuit 17.

FIG. 2 is a schematic structural view showing an example of the MOS typeimage sensor. The MOS type image sensor includes a pixel portion 21, avertical scanning system 22, and a horizontal scanning system 23.

The pixel portion 21 has a structure in which a number of unit pixels 24each made of, for example, a photodiode PD and a selection transistorTr, are arranged in a matrix. Here, for simplification of the drawing, apixel arrangement of 6 rows and 6 columns is shown. Then, in FIG. 2, anaddress XY indicating a pixel position is given as a subscript to eachof the unit pixels 24. For example, a pixel at a first row and a firstcolumn is designated as a pixel 2411.

Vertical selection lines 25-1 to 25-6 and vertical signal lines 26-1 to26-6 are arranged in a matrix for the respective pixels of the pixelportion 21. Then, control electrodes of the selection transistors Tr inthe respective unit pixels 24 are connected to the vertical selectionlines 25-1 to 25-6, and output electrodes of the selection transistorsTr are connected to the vertical signal lines 26-1 to 26-6 for everypixel.

The vertical scanning system 22 is constituted by a V (vertical) decoder221. The V decoder 221 successively outputs row selection pulses V1 toV6 in response to V selection signals inputted from the timing generator13 of FIG. 1, and applies them to the respective vertical selectionlines 25-1 to 25-6.

The horizontal scanning system 23 includes horizontal selectiontransistors 231-1 to 231-6, a H (horizontal) decoder 232, and an outputamplifier 233. The horizontal selection transistors 231-1 to 231-6 arerespectively connected between a horizontal signal line 234 and therespective output terminals of the vertical signal lines 26-1 to 26-6.The H decoder 232 successively outputs horizontal selection pulses H1 toH6 in response to H selection signals inputted from the timing generator13, and gives them to the respective control electrodes of thehorizontal selection transistors 231-1 to 231-6.

The output amplifier 233 is connected to one end (output end) of thehorizontal signal line 234, and leads a pixel signal, which issuccessively outputted from the pixel portion 21 through the horizontalselection transistors 231-1 to 231-6 to the horizontal signal line 234,as an output signal VOUT. Incidentally, a clamp transistor 235 isconnected to the other end of the horizontal signal line 234. This clamptransistor 235 clamps a potential of the horizontal signal line 234 to acertain fixed voltage (constant voltage) in response to a clamp pulseCLP inputted from the timing generator 13.

Next, in the MOS type image sensor of the above structure, the operationat the time of all-pixel read in which pixel signals of all pixels ofthe pixel portion 21 are read out, will be described with reference to atiming chart of FIG. 3. Here, there is shown timing relation among therow selection pulses V1, V2, the horizontal selection pulses H1 to H6,the clamp pulse CLP, and the output signal VOUT.

First, when the row selection pulse V1 of high potential is outputtedfrom the V decoder 221 and is applied to the vertical selection line25-1, signals of the pixels 2411 to 2416 of the first row arerespectively read out to the vertical signal lines 26-1 to 26-6. In thisstate, when the horizontal selection pulse H1 of high potential isoutputted from the H decoder 232, the horizontal selection switch 231-1becomes in an on state. Then, the signal of the pixel 2411 read out tothe vertical signal line 26-1 is outputted to the horizontal signal line234 through the horizontal selection switch 231-1.

At this time, a potential variation corresponding to the signal of thepixel 2411 is generated in the horizontal signal line 234. Then, thepotential variation of the horizontal signal line 234 is amplified bythe output amplifier 233, and is outputted as the pixel signal of thepixel 2411. Here, when the clamp transistor 235 is turned on in responseto the clamp pulse CLP, the horizontal signal line 234 and the verticalsignal line 26-1 are reset to a certain constant voltage.

Next, the horizontal selection pulse H1 and the clamp pulse CLPdisappear, and instead thereof, when the horizontal selection pulse H2of high potential is outputted from the H decoder 232; similarly to thecase of the pixel 2411, the pixel signal of the pixel 2412 is outputted.Subsequently, this read operation is repeated, so that all pixel signalsof the first row from the pixel 2411 to the pixel 2416 are successivelyread out.

Next, the vertical selection pulse V1 disappears, and instead thereof,when the vertical selection pulse V2 of high potential is outputted fromthe V decoder 221 and is applied to the vertical selection line 25-2,the respective pixels 2421 to 2426 of the second row are selected. Then,similarly to the first row, the operation of column selection isrepeated, and subsequently, the row selection and the column selectionare repeated up to the sixth row, so that the pixel signals of allpixels in the pixel portion 21 are successively read out.

It is important in the foregoing all-pixel read operation that if thevertical selection pulses V1 to V6 and the horizontal selection pulsesH1 to H6 can be adequately outputted at suitable timing, a pixel signalof an arbitrary pixel can be selectively read out. This means that atthe stage of reading out signals from the respective pixels, athinning-out processing of pixel information can be carried out. Then,here, the structure using the decoders as row selection means and columnselection means is adopted to produce the degree of freedom.

Incidentally, in the case of a camera system dealing with color, colorfilters are provided in pixel units on the pixel portion 21 in, forexample, an on-chip manner. Here, as shown in FIG. 4, in a MOS typeimage sensor carrying filters, as color filters 27, having a primarycolor coding of repetition of units each having two verticals (twohorizontals (two rows and two columns), an operation in a case where athinning-out read processing for thinning out and reading out pixelinformation is realized, will be described.

Like this, in the case where the color filters 27 having the primarycolor coding of repetition of two verticals (two horizontals are used,as a first example of thinning-out read, as shown by oblique lines inFIG. 4, while two rows and two columns are skipped, that is, every threerows and three columns, a pixel signal is read out for each pixel.

In order to realize this thinning-out read, the frequency dividingcircuit 12 of FIG. 1 divides the frequency of the inputted clock by afactor of 9 when the mode selection signal for selecting thethinning-out read mode is given from the operation mode setting portion13. FIG. 5 shows a timing chart at the time of the thinning-out read.

Incidentally, the horizontal axis (time axis) of FIG. 5 is differentfrom that of the case of FIG. 3 in scale, and although the actual scaleis 9 times larger than the case of FIG. 3, it is depicted in a triplescale from the circumstances of the paper plane. Besides, although FIG.4 shows the color coding corresponding to the pixel arrangement of eightrows and eight columns, FIG. 5 shows the timing relation correspondingto the pixel arrangement of six rows and six columns of FIG. 2.

In the thinning-out read mode, first, when the row selection pulse V1 ofhigh potential is outputted from the V decoder 221 and is applied to thevertical selection line 25-1, the respective signals of the pixels 2411to 2416 of the first row are read out to the vertical signal lines 26-1to 26-6. In this state, when the horizontal selection pulse H1 of highpotential is outputted from the H decoder 232, the horizontal selectionswitch 231-1 becomes in an on state, and the signal of the pixel 2411 isoutputted from the vertical signal line 26-1 through the horizontalselection switch 231-1 to the horizontal signal line 234.

At this time, in the horizontal signal line 234, a potential variationcorresponding to the signal of the pixel 2411 is generated. Then, thepotential variation of the horizontal signal line 234 is amplified bythe output amplifier 233, and is outputted as the pixel signal of thepixel 2411. Here, when the clamp transistor 235 is turned on in responseto the clamp pulse CLP, the horizontal signal line 234 and the verticalsignal line 26-1 are reset to a certain constant voltage.

Next, the horizontal selection pulse H1 and the clamp pulse CLPdisappear, and instead thereof, the horizontal selection pulse H4 ofhigh potential is outputted from the H decoder 232. Then, similarly tothe case of the pixel 2411, the signal of the pixel 2414 is read out tothe vertical signal line 26-4, and is outputted through the horizontalselection transistor 231-4, the horizontal signal line 234, and theoutput amplifier 233. By this, the respective signals as to the pixels2412 and 2413 are not read out but are thinned out.

Next, although not shown in the timing chart of FIG. 5, instead of thevertical selection pulse V1, when the vertical selection pulse V4 ofhigh potential is outputted from the V decoder 221 and is applied tovertical selection line 25-4, the pixels 2441 to 2446 of the fourth roware selected. Then, similarly to the first row, the operation of columnselection is repeated every three columns, so that the pixel signal isread out for each pixel while two rows and two columns are skipped.

According to the thinning-out read of the first example described above,the following merits are obtained. That is, the amount of pixelinformation can be compressed by a factor of 9, while both the sequenceof the pixel signals and the spatial position relation are the same asthe all-pixel read. Further, since it is not necessary to change thesequence of the signal processing system at the subsequent stage, a loadis not applied to the signal processing system. Besides, since the clockfrequency of the system becomes 1/9, the consumed electric power canalso be reduced by a factor of 9. Further, the number of imagesoutputted per second, that is, a frame rate can be made constant.

Subsequently, similarly to the first example, on the assumption thatcolor filters having a color coding of repetition of two verticals (twohorizontals are used, a second example and a third example ofthinning-out read will be described.

First, in the thinning-out read of the second example, as shown byoblique lines in FIG. 6, two verticals (two horizontals are made a unit,and a pixel signal is successively read out every other unit in both therow direction and the column direction. Besides, in order to realize thethinning-out read, the clock frequency is divided by a factor of 4 inthe frequency dividing circuit 12 of FIG. 1.

According to the thinning-out read of the second example, the followingmerits are obtained. That is, the amount of pixel information can becompressed by a factor of 4, while the sequence of the pixel signals iskept the same as the all-pixel read. Further, since the sequence of thesubsequent stage signal processing system has only to deal with thechange of spatial position relation of color, the load of the signalprocessing system may be made low. Besides, since the clock frequency ofthe system becomes ¼, the consumed electric power can also be reduced bya factor of 4, and further, the frame rate can be made constant.

Next, in the thinning-out read of the third example, two verticals (twohorizontals are made a unit, and four (2 (2) such units are integrated,and readout is made while an addition signal of lower left pixels in theunits, an addition signal of lower right pixels, an addition signal ofupper left pixels, and an addition signal of upper right pixels arescanned as shown by arrows in FIG. 7. Besides, in order to realize thethinning-out read, the clock frequency is divided by a factor of 4 inthe frequency dividing circuit 12 of FIG. 1.

According to the thinning-out read of the third example, the followingmerits are obtained. That is, the amount of pixel information can becompressed by a factor of 4, while the sequence of pixel signals is keptthe same as the all-pixel read, and the sensitivity becomes 4 timeshigher by the addition read. Further, since the sequence of thesubsequent stage signal processing system has only to deal with thechange of the spatial position relation of the centroid of color, theload of the signal processing system may be made low. Incidentally, thespatial position relation of the centroid of color is the same as thatof the thinning-out read of the second example. Besides, since the clockfrequency of the system becomes ¼, the consumed electric power can alsobe reduced by a factor of 4, and further, the frame rate can be madeconstant.

FIG. 8 is a view showing a primary color coding of repetition of thesame color in the same column and three colors in the row direction.Here, thinning-out read in a case where color filters 27′ having thiscolor coding are used, will be described as a fourth example.

In the thinning-out read of the fourth example, as shown by obliquelines in FIG. 8, a pixel signal is read out every other pixel in boththe row direction and the column direction. Besides, in order to realizethis thinning-out read, the clock frequency is divided by a factor of 4in the frequency dividing circuit 12 of FIG. 1.

According to the thinning-out read of the fourth example, the followingmerits are obtained. That is, the amount of pixel information can becompressed by a factor of 4, while both the sequence of pixel signalsand the position relation are the same as the all-pixel read except thatthe definitions of two colors are replaced with each other. Further, inthe sequence of the subsequent stage signal processing system, since thedefinitions of two colors have only to be replaced, the load of thesignal processing system may be made low. Besides, since the clockfrequency of the system becomes ¼, the consumed electric power can alsobe reduced by a factor of 4, and the frame rate can be made constant.

It is important in the foregoing thinning-out read operations of therespective examples that if selection in the vertical direction and thehorizontal direction can be adequately made, a pixel signal at anarbitrary position can be selectively read out. Accordingly, the XYaddress type solid-state image pickup element 11 is not limited to thepassive type MOS type image sensor shown in FIG. 2, but any image sensormay be used as long as a row and a column are selected to read out apixel signal, such as a CMD (Charge Modulation Device) type image sensorwherein pixels are constituted by an MOS transistor or an amplifiedimage sensor.

Incidentally, although the above embodiment adopts the structure usingthe decoders as selection means of the row and selection means of thecolumn to produce the degree of freedom, in addition to the decoders, itis also possible to adopt the structure using two shift registers forthe all-pixel read and for the thinning-out read, and in short, anystructure may be adopted as long as the same driving can be performed.

As described above, according to the present invention, whenthinning-out read is specified for an XY address type solid-state imagepickup element, a clock frequency of a system is changed, and on thebasis of the changed clock frequency, pixels are selected in a sequencecorresponding to the color coding of color filters to read out pixelsignals. Thus, since a thinning-out processing can be carried out at astage where pixel information is read out from the pixels, the amount ofthe pixel information can be compressed without applying a load to asignal processing system, while both the sequence of the pixelinformation and the spatial position relation are kept the same asall-pixel read, and further, consumed electric power can be reduced asthe clock frequency of the system is changed, and a frame rate can bemade constant even if an operation mode is changed.

What is claimed is:
 1. An imaging system, comprising: a MOS type sensor,including: a plurality of pixels arranged in a matrix; plurality ofcolor filters individually formed at respective pixels; and a drivingunit configured to select the pixels and read out pixel signals based ona read mode; and a signal processing circuit configured to process anautomatic exposure, an automatic focusing, and an automatic whitebalance according to pixel signals, wherein the driving unit isconfigured to read out pixel signals of selected pixels in athinning-out read mode such that the selected pixels are read out basedon a predetermined color pattern and non-selected pixels are not readout, a pixel unit is made of pixels of two rows and two columns, and thedriving unit is configured to read out an addition signal of lower leftpixels corresponding to the units, an addition signal of lower rightpixels, an addition signal of upper left pixels, and an addition signalof upper right pixels.
 2. The imaging system according to claim 1,wherein the read mode is configured to control a clock frequencyselection circuit which provides a selectable clock signal thatdetermines which pixels are selected for read out and pixels areselected on the basis of a changed clock frequency in a sequencecorresponding to the predetermined color pattern based on an output froma single frequency divider circuit that provides an input to a timinggenerator in order to generate selection signals to select either allpixel read out or a reduced pixel output.
 3. The imaging systemaccording to claim 1, wherein at least one read mode is an all-pixelread out mode.
 4. The imaging system according to claim 1, wherein thedriving unit reduces a number of pixels read out in the thinning-outread mode.
 5. The imaging system according to claim 1, wherein the colorfilters are set forth in a Bayer arrangement.
 6. The imaging systemaccording to claim 1, wherein in the thinning-out read mode the drivingunit is configured to reduce a power consumption of the imaging device.7. An imaging system comprising: a MOS type image sensor including afirst pixel unit and a second pixel unit, and configured to add a pixelsignal of the first pixel unit and a pixel signal of the second pixelunit; and a signal processing circuit configured to process an automaticexposure, an automatic focusing, and an automatic white balanceaccording to the added pixel signal.
 8. The imaging system according toclaim 7, wherein the MOS type image sensor includes a plurality of colorfilters individually formed at respective pixels, wherein the colorfilters are set forth in a Bayer arrangement.